Method of processing silicon substrate and method of manufacturing liquid discharge head
US8197705B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2008 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Feb 23, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB41J2/1629
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A method of manufacturing a substrate for a liquid discharge head having a silicon substrate in which a liquid supply port is provided includes providing the silicon substrate, an etching mask layer having an aperture being formed on one surface of the silicon substrate, forming a region comprising an amorphous silicon in the interior of the silicon substrate by irradiating the silicon substrate with laser light, forming a recess, which has an opening at a part of a portion exposed from the aperture on the one surface, from the one surface of the silicon substrate toward the region, and forming the supply port by performing etching on the silicon substrate in which the recess and the region have been formed from the one surface through the aperture of the etching mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.