Patent · US Active

Methods of forming sputtering targets

US8197894B2 · kind B2 · utility

19Cited by
107References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 8, 2007
Grant dateJun 12, 2012
Priority date
Expiry dateMar 28, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/332
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

In various embodiments, sputter-target formation includes application of a layer having an intermediate coefficient of thermal expansion between the backing plate and the target material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.