Methods of forming sputtering targets
US8197894B2 · kind B2 · utility
19Cited by
107References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2007 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Mar 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In various embodiments, sputter-target formation includes application of a layer having an intermediate coefficient of thermal expansion between the backing plate and the target material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.