Methods of fabricating magnetic memory devices with thin conductive bridges
US8198102B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2009 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Jul 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.