Methods of forming non-volatile memory devices including dummy word lines
US8198157B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2011 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Sep 20, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3427
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device may include a semiconductor substrate including an active region at a surface thereof, a first memory cell string on the active region, and a second memory cell string on the active region. The first memory cell string may include a first plurality of word lines crossing the active region between a first ground select line and a first string select line, and about a same first spacing may be provided between adjacent ones of the first plurality of word lines. The second memory cell string may include a second plurality of word lines crossing the active region between a second ground select line and a second string select line, and about the same first spacing may be provided between adjacent ones of the second plurality of word lines. Related methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.