Air channel interconnects for 3-D integration
US8198174B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2009 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Aug 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06589
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A three-dimensional (3D) chip stack structure and method of fabricating the structure thereof are provided. The 3D chip stack structure includes a plurality of vertically stacked chips which are interconnected and bonded together, wherein each of the vertically stacked chips include one or more IC device strata. The 3D chip stack structure further includes an air channel interconnect network embedded within the chip stack structure, and wherein the air channel interconnect network is formed in between at least two wafers bonded to each other of the vertically stacked wafers and in between at least two bonded wafers of the vertically stacked wafers at a bonding interface thereof. In addition, the 3D chip stack structure further includes one or more openings in a peripheral region of the chip stack structure that lead into and out of the air channel interconnect network, so that air can flow into and out of the air channel interconnect network through the one or more openings to remove heat from the chip stack structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.