Methods of fabricating normally-off semiconductor devices

US8198178B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Sten Heikman · Goleta, US
• Yifeng Wu · Goleta, US

Key dates

• Filing date: Jul 1, 2011
• Grant date: Jun 12, 2012
• Expiry date: Jul 1, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride barrier layer and the spacer layer are etched to form a trench. The trench extends through the barrier layer and exposes a portion of the buffer layer. A dielectric layer is formed on the spacer layer and in the trench and a gate electrode is formed on the dielectric layer. Related methods of forming semiconductor devices are also provided herein.