Compound semiconductor substrate grown on metal layer, method for manufacturing the same, and compound semiconductor device using the same
US8198649B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2007 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Aug 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.