Ultra-thin die and method of fabricating same

US8198705B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• David Mancini · Fountain Hills, US
• Young Sir Chung · Gilbert, US
• William J. Dauksher · Mesa, US
• Donald F. Weston · Phoenix, US
• Steven R. Young · Gilbert, US
• Robert W. Baird · Gilbert, US

Key dates

• Filing date: Sep 16, 2008
• Grant date: Jun 12, 2012
• Expiry date: Mar 2, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/977
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.