Establishing a uniformly thin dielectric layer on graphene in a semiconductor device without affecting the properties of graphene
US8198707B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2009 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Jul 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and semiconductor device for forming a uniformly thin dielectric layer on graphene. A metal or semiconductor layer is deposited on graphene which is located on the surface of a dielectric layer or on the surface of a substrate. The metal or semiconductor layer may act as a nucleation layer for graphene. The metal or semiconductor layer may be subjected to an oxidation process. A thin dielectric layer may then be formed on the graphene layer after the metal or semiconductor layer is oxidized. As a result of synthesizing a metal-oxide layer on graphene, which acts as a nucleation layer for the gate dielectric and buffer to graphene, a uniformly thin dielectric layer may be established on graphene without affecting the underlying characteristics of graphene.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.