Sanjay Banerjee
41Patents
14h-index
45Co-inventors
81Inventor score
Filing activity: Nov 13, 1986 → May 3, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6319799A | High mobility heterojunction transistor and method | Electricity | 129 | Expired |
| US6313486A | Floating gate transistor having buried strained silicon germanium channel layer | Electricity | 104 | Expired |
| US4864374A | Two-transistor dram cell with high alpha particle immunity | Physics | 64 | Expired |
| US5066607A | Method of making a trench DRAM cell with dynamic gain | Electricity | 60 | Expired |
| US4713678A | dRAM cell and method | Electricity | 56 | Expired |
| US6313487A | Vertical channel floating gate transistor having silicon germanium channel layer | Electricity | 39 | Expired |
| US4999811A | Trench DRAM cell with dynamic gain | Electricity | 33 | Expired |
| US6744083B2 | Submicron MOSFET having asymmetric channel profile | Electricity | 31 | Expired |
| US5546340A | Non-volatile memory array with over-erase correction | Physics | 29 | Expired |
| US7181730B2 | Methods and apparatus for indirect VLIW memory allocation | Physics | 26 | Expired |
| US5548132A | Thin film transistor with large grain size DRW offset region and small grain size source and drain and channel regions | Electricity | 19 | Expired |
| US5977560A | Thin film transistor constructions with polycrystalline silicon-germanium alloy doped with carbon in the channel region | Electricity | 18 | Expired |
| US5432366A | P-I-N MOSFET for ULSI applications | Electricity | 18 | Expired |
| US5436474A | Modulation doped field effect transistor having built-in drift field | Electricity | 16 | Expired |
| US6320202A | Bottom-gated thin film transistors comprising germanium in a channel region | Electricity | 13 | Expired |
| US5109259A | Multiple DRAM cells in a trench | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5665981A | Thin film transistors and method of promoting large crystal grain size in the formation of polycrystalline silicon alloy thin films | Electricity | 10 | Expired |
| US5985703A | Method of making thin film transistors | Electricity | 8 | Expired |
| US6200839A | Methods of forming thin film transistors | Electricity | 7 | Expired |
| US6017782A | Thin film transistor and method of forming thin film transistors | Electricity | 7 | Expired |
| US5936262A | Thin film transistors | Electricity | 5 | Expired |
| US8629427B2 | Topological insulator-based field-effect transistor | Electricity | 5 | Active |
| US8198707B2 | Establishing a uniformly thin dielectric layer on graphene in a semiconductor device without affecting the properties of graphene | Electricity | 4 | Active |
| US4969019A | Three-terminal tunnel device | Electricity | 3 | Expired |
| US6214652A | Thin film transistors and method of forming thin film transistors | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.