Semiconductor device and method of manufacturing the same
US8198730B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2008 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Sep 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a multilayer interconnection including a copper interconnection film formed in a predetermined area within an insulating film, a liner film, and a high-melting-point metal film. The copper interconnection film is polycrystalline, and crystal grains occupying 40% or more of an area of a unit interconnection surface among crystal grains forming the polycrystal are oriented to (111) in a substrate thickness direction. The copper interconnection film has crystal conformity with the noble metal liner film. In a case where the high-melting-point metal film is formed of Ti and the noble metal liner film is a Ru film, the high-melting-point metal of Ti dissolves into Ru in a solid state to form the noble metal liner. Thus, a copper interconnection is formed with both of Cu diffusion barrier characteristics and Cu crystal conformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.