Methods of reading and using memory cells
US8199556B2 · kind B2 · utility
15Cited by
4References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2009 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Jun 21, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Some embodiments include methods of reading memory cells. The memory cells have a write operation that occurs only if a voltage of sufficient absolute value is applied for a sufficient duration of time; and the reading is conducted with a pulse that is of too short of a time duration to be sufficient for the write operation. In some embodiments, the pulse utilized for the reading may have an absolute value of voltage that is greater than or equal to the voltage utilized for the write operation. In some embodiments, the memory cells may comprise non-ohmic devices; such as memristors and diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.