Nonvolatile semiconductor memory device
US8199573B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2010 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Nov 12, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device comprises: a bit line; a source line; a memory string having a plurality of electrically data-rewritable memory transistors connected in series; a first select transistor provided between one end of the memory string and the bit line; a second select transistor provided between the other end of the memory string and the source line; and a control circuit configured to control a read operation. A plurality of the memory strings connected to one bit line via a plurality of the first select transistors. During reading of data from a selected one of the memory strings, the control circuit renders conductive the first select transistor connected to an unselected one of the memory strings and renders non-conductive the second select transistor connected to unselected one of the memory strings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.