Inventor · Yokohama, JP

Ryouhei Kirisawa

75Patents
22h-index
39Co-inventors
88Inventor score

Filing activity: Nov 17, 1988 → Sep 12, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US4959812A Electrically erasable programmable read-only memory with NAND cell structure Physics 528 Expired
US5602789A Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller Physics 195 Expired
US8178919B2 Nonvolatile semiconductor memory device and method for manufacturing same Electricity 191 Active
US8374033B2 Nonvolatile semiconductor memory device Electricity 190 Active
US5386422A Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels Physics 168 Expired
US8507972B2 Nonvolatile semiconductor memory device Electricity 158 Active
US5469444A Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels Physics 140 Expired
US5321699A Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels Physics 127 Expired
US4939690A Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation Physics 109 Expired
US5768195A Semiconductor memory device Electricity 59 Expired
US5293337A Electrically erasable programmable read-only memory with electric field decreasing controller Physics 56 Expired
US8169826B2 Nonvolatile semiconductor memory device Electricity 53 Active
USRE35838E Electrically erasable programmable read-only memory with NAND cell structure General 52 Expired
US8436414B2 Non-volatile semiconductor stacked memory device having two semiconductor pillars in a through hole and method for manufacturing same Electricity 51 Active
US5050125A Electrically erasable programmable read-only memory with NAND cellstructure Physics 44 Expired
US5508957A Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through Electricity 37 Expired
US8199573B2 Nonvolatile semiconductor memory device Physics 31 Active
US5392238A Nonvolatile semiconductor memory device Physics 30 Expired
US8194467B2 Nonvolatile semiconductor memory device Electricity 29 Active
US8188530B2 Nonvolatile semiconductor memory device and method for manufacturing same Electricity 28 Active
US5528547A Electrically erasable programmable read-only memory with electric field decreasing controller Physics 28 Expired
US5402373A Electrically erasable programmable read-only memory with electric field decreasing controller Physics 26 Expired
US5515327A Nonvolatile semiconductor memory device having a small number of internal boosting circuits Physics 21 Expired
US5978265A Non-volatile semiconductor memory device with nand type memory cell arrays Physics 20 Expired
US5179427A Non-volatile semiconductor memory device with voltage stabilizing electrode Physics 20 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.