Atomic layer deposition system utilizing multiple precursor zones for coating flexible substrates
US8202366B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2010 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Apr 6, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45551
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Systems and methods for atomic layer deposition (ALD) on a flexible substrate involve guiding the substrate back and forth between spaced-apart first and second precursor zones and through a third precursor zone interposed between the first and second precursor zones, so that the substrate transits through each of the precursor zones multiple times. Systems may include a series of turning guides spaced apart along the first and second precursor zones for supporting the substrate along an undulating transport path. As the substrate traverses back and forth between the first and second precursor zones and through the third precursor zone, it passes through a first series of flow-restricting passageways of a first isolation region interposed between the first and third precursor zones and a second series of flow-restricting passageways of a second isolation region interposed between the second and third precursor zones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.