Metal polishing composition and chemical mechanical polishing method
US8202445B2 · kind B2 · utility
0Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2009 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Jun 19, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1409
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention provides a metal polishing composition that is used in chemical mechanical polishing in production of a semiconductor device, and includes an oxidizing agent, an abrasive grain, and at least one compound selected from compounds represented by the following formula (I) and the following formula (II). The invention also provides a chemical mechanical polishing method that uses the metal polishing composition. In formula (I), R1 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. In formula (II), R2 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.