Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the device
US8202752B2 · kind B2 · utility
2Cited by
10References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 22, 2009 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Nov 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.