Surface treatment for molecular bonding
US8202785B2 · kind B2 · utility
18Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2009 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Oct 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of bonding a first substrate to a second substrate by molecular bonding by forming an insulating layer on the bonding face of the first substrate, chemical-mechanical polishing of the insulating layer, activating a bonding surface of the second substrate by plasma treatment, etching an exposed surface of the insulating layer, and bonding together the two substrates together by molecular bonding wherein the etching is conducted after the chemical-mechanical polishing and before the bonding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.