Method for manufacturing semiconductor devices having a glass substrate

US8202786B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Carsten von Koblinski · Velden am Wörther See, AT
• Gerald Lackner · Arnoldstein, AT
• Karin Schrettlinger · Trebesing, AT
• Markus Ottowitz · Arnoldstein, AT

Key dates

• Filing date: Jul 15, 2010
• Grant date: Jun 19, 2012
• Expiry date: Nov 16, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/66
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallization region is formed on the machined second surface of the semiconductor wafer.