CMOS image sensor pixel with an NMOS charge amplifier
US8203111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2009 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Sep 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/778
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A CMOS image sensor in which each column of pixels is connected to a signal line that is coupled to a current source, and each pixel includes a charge amplifier having a common source configuration arranged such that a charge generated by its photodiode is amplified by the charge amplifier and transmitted to readout circuitry by way of the signal line. In one embodiment the charge amplifier utilizes an NMOS transistor to couple the photodiode charge in an inverted manner to the signal line while converting the charge to a voltage through a capacitor coupled between the signal line and photodiode (i.e., forming a feedback of the NMOS amplifier transistor).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.