Switching element, reconfigurable logic integrated circuit and memory element

US8203133B2 · kind B2 · utility

Assignee

• NEC CORPORATION · JP

Inventors

• Toshitsugu Sakamoto · Tokyo, JP
• Hisao Kawaura · Tokyo, JP
• Hiroshi Sunamura · Yokohama, JP
• Naoki Banno · Tokyo, JP

Key dates

• Filing date: Dec 27, 2005
• Grant date: Jun 19, 2012
• Expiry date: Jun 8, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/90

Abstract

The switching element of the present invention is of a configuration that includes: an ion conduction layer (40) that includes an oxide, a first electrode (21) and a second electrode (31) that are provided in contact with the ion conduction layer (40) and that are connected by the precipitate of metal that is supplied from the outside or for which electrical properties change due to the dissolution of precipitated metal, and a third electrode (35) provided in contact with the ion conduction layer (40) and that can supply metal ions. The use of this configuration allows the switching voltage to be set higher than in the related art.