Patent · US Active

Photonic structure

US8203137B2 · kind B2 · utility

15Cited by
2References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 13, 2009
Grant dateJun 19, 2012
Priority date
Expiry dateMar 9, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B6/136
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photonic structure includes a plurality of annealed, substantially smooth-surfaced ellipsoids arranged in a matrix. Additionally, a method of producing a photonic structure is provided. The method includes providing a semiconductor material, providing an etch mask comprising a two-dimensional hole array, and disposing the etch mask on at least one surface of the semiconductor material. The semiconductor material is then etched through the hole array of the etch mask to produce holes in the semiconductor material and thereafter applying a passivation layer to surfaces of the holes. Additionally, the method includes repeating the etching and passivation-layer application to produce a photonic crystal structure that contains ellipsoids within the semiconductor material and annealing the photonic crystal structure to smooth the surfaces of the ellipsoids.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.