Semiconductor device having a metal oxide channel
US8203144B2 · kind B2 · utility
174Cited by
1References
8Claims
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Key dates
| Filing date | May 13, 2010 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Jul 2, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T408/5633
Abstract
A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.