Devices containing permanent charge
US8203180B2 · kind B2 · utility
2Cited by
17References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2011 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | May 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An edge termination structure includes a final dielectric trench containing permanent charge. The final dielectric trench is surrounded by first conductivity type semiconductor material (doped by lateral outdiffusion from the trenches), which in turn is laterally surrounded by second conductivity type semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.