Memory cell with proportional current self-reference sensing
US8203899B2 · kind B2 · utility
15Cited by
16References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2010 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Nov 15, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Various embodiments of the present invention are generally directed to a method and apparatus for sensing a programmed state of a memory cell, such as a spin-torque transfer random access memory (STRAM) cell. A first read current is applied to the memory cell to generate a first voltage. A second read current is subsequently applied to the memory cell to generate a second voltage, with the second read current being proportional in magnitude to the first read current. A comparison is made between the first and second voltages to determine the programmed state of the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.