Patent · US Active

Method for producing nMOS and pMOS devices in CMOS processing

US8207030B2 · kind B2 · utility

3Cited by

2References

18Claims

0Family size

Assignee

IMEC · BE

Inventors

David Paul Brunco · Latham, US
Brice De Jaeger · Leuven, BE
Simone Severi · Leuven, BE

Key dates

Filing date	Apr 28, 2009
Grant date	Jun 26, 2012
Priority date	—
Expiry date	Apr 28, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing one or more nMOSFET devices and one or more pMOSFET devices on the same semiconductor substrate is disclosed. In one aspect, the method relates to the use of a single activation anneal that serves for both Si nMOS and Ge pMOS. By use of a solid phase epitaxial regrowth (SPER) process for the Si nMOS, the thermal budget for the Si nMOS can be lowered to be compatible with Ge pMOS.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.