Method for fabricating a semiconductor device
US8207043B2 · kind B2 · utility
3Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2009 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Dec 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor MOS device is provided. A gate structure is formed on a substrate. A source and a drain are formed in the substrate on both sides of the gate structure. The substrate is then subjected to a pre-amorphization implant (PAI) process. A transitional stress layer is then formed on the substrate. Thereafter, a laser anneal with a first temperature is performed. After the laser anneal, a rapid thermal process is performed with a second temperature that is lower than the first temperature. Subsequently, the transitional stress layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.