Process for atomic layer deposition
US8207063B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2007 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Jun 14, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB33Y80/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.