Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device
US8207544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2010 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Dec 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle ALPHA with respect to the c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes a plurality of GaN-based semiconductor layers. The reference axis is inclined at a first angle ALPHA1 in the range of not less than 10 degrees, and less than 80 degrees from the c-axis of the III-nitride semiconductor toward a first crystal axis, either one of the m-axis and a-axis. The reference axis is inclined at a second angle ALPHA2 in the range of not less than −0.30 degrees and not more than +0.30 degrees from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. The predetermined angle, the first angle, and the second angle have a relation of ALPHA=(ALPHA12+ALPHA22)1/2. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the p…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.