Vertical channel transistor and method of fabricating the same
US8207566B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 24, 2011 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Mar 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/025
Abstract
A vertical channel transistor includes a plurality of active pillar patterns extending perpendicularly from the top surface of the substrate toward an upper part. A gate insulating layer is deposited on the side wall of the active pillar pattern and serves as an ion diffusion barrier between the pillar patterns and surrounding lower gate electrodes. The resultant pillar pattern structure is encapsulated with a metal. The resultant pillar pattern is surrounded on all sides by a specified height by a sacrificial layer of Spin-On Dielectric (SOD). The metal layer is etched-back to the height of the sacrificial layer, thus forming the lower gate electrodes. A spacer layer of an insulating mater is deposited surrounding the upper part of the pillar patterns and the sacrificial layer is removed exposing a part of the lower gate electrodes. The exposed gate electrode is etched to facilitate semiconductor integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.