Memristor having a nanostructure in the switching material

US8207593B2 · kind B2 · utility

Assignee

• HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. · US

Inventors

• Alexandre M. Bratkovski · Mountain View, US
• Qiangfei Xia · Palo Alto, US
• Jianhua Yang · Palo Alto, US

Key dates

• Filing date: Jul 28, 2009
• Grant date: Jun 26, 2012
• Expiry date: Sep 20, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/773

Abstract

A memristor includes a first electrode having a first surface, at least one electrically conductive nanostructure provided on the first surface, in which the at least one electrically conductive nanostructure is relatively smaller than a width of the first electrode, a switching material positioned upon said first surface, in which the switching material covers the at least one electrically conductive nanostructure, and a second electrode positioned upon the switching material substantially in line with the at least one electrically conductive nanostructure, in which an active region in the switching material is formed substantially between the at least one electrically conductive nanostructure and the first electrode.