Heat assisted magnetic write element
US8208295B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Oct 15, 2010 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Oct 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3263
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic element for writing by thermally assisted magnetic field or thermally assisted spin transfer comprises a stack consisting of a free magnetic layer, also called storage layer or switchable magnetization layer, of which the magnetization direction is switchable between two nonwrite stable states, both directed out-of-plane and substantially perpendicular to the plane of said layer, and of which the magnetization is spontaneously reoriented from substantially perpendicular to the plane to substantially in the plane under the effect of the rise in temperature during the writing, at least one reference magnetic layer, called pinned layer, of which the magnetization is oriented substantially perpendicular to the plane of said layer, a nonmagnetic spacer inserted between the two layers and means for making an electric current flow perpendicular to the plane of said layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.