Simulation method and simulation program
US8209155B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2008 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Nov 9, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/23
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A simulation method includes dividing a material surface into finite computational elements, and calculating a deposition rate or etching rate at each of the computational elements to simulate a feature profile of the material surface, the calculating including calculating an indirect effect of a first computational element on the deposition rate or etching rate of a second computational element. The calculating the indirect effect includes correcting a surface profile at the first computational element on the basis of a surface structure around the first computational element, and calculating the indirect effect on the basis of the corrected surface profile at the first computational element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.