Method for pattern formation and resin composition for use in the method
US8211624B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2008 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Mar 24, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/106
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern forming method includes (1) selectively exposing a first resist layer, and developing the exposed first resist layer to form a first pattern, (2) applying a resin composition containing a hydroxyl group-containing resin and a solvent to the first pattern, baking the applied resin composition, and developing the baked resin composition to form a second pattern, the hydroxyl group-containing resin becoming insoluble or scarcely soluble in a developer when baked, and (3) totally or selectively exposing the second pattern to make the second pattern partly soluble in the developer, and developing the exposed second pattern to form a third pattern in which at least a hole or a groove is formed in the second pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.