Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes

US8211723B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Daniel F. Feezell · Albuquerque, US
• Mathew C. Schmidt · Lompoc, US
• Kwang Choong Kim · Seoul, KR
• Robert M. Farrell · Goleta, US
• Daniel A. Cohen · Los Gatos, US
• James S. Speck · Fremont, US
• Steven P. DenBaars · Goleta, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Feb 12, 2008
• Grant date: Jul 3, 2012
• Expiry date: Jan 7, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/812
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.