Non-volatile memory

US8211762B1 · kind B1 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Emilio Camerlenghi · Bergamo, IT
• Giulio Albini · Boise, US

Key dates

• Filing date: Jul 30, 2009
• Grant date: Jul 3, 2012
• Expiry date: Feb 23, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/30

Abstract

Briefly, embodiments of non-volatile memory and embodiments of fabrication thereof are disclosed. For example, a non-volatile memory device having a gate assembly with a floating gate and a control gate assembly is described. The control gate assembly includes a non-metal conductive control gate and a metal control gate in one embodiment. Additional embodiments are described, including use of a sacrificial nitride layer and forming contact recesses to create source or drain contacts, as other examples.