Method for manufacturing a semiconductor device with less leakage current induced by carbon implant
US8211784B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2009 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Mar 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has at least two main carbon-rich regions and two additional carbon-rich regions. The main carbon-rich regions are separately located in a substrate so that a channel region is located between them. The additional carbon-rich regions are respectively located underneath the main carbon-rich regions. The carbon concentrations is higher in the main carbon-rich regions and lower in the additional carbon-rich regions, and optionally, the absolute value of a gradient of the carbon concentration of the bottom portion of the main carbon-rich regions is higher than the absolute value of a gradient of the carbon concentration of the additional carbon-rich regions. Therefore, the leakage current induced by a lattice mismatch effect at the carbon-rich and the carbon-free interface can be minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.