Method of producing semiconductor device
US8211809B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2009 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Mar 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is intended to produce a semiconductor device with a stable gate length, using an end-point detection process based on monitoring a plasma emission intensity during dry etching for setting a gate length. A semiconductor device production method of the present invention comprises the steps of: forming a first dielectric or gate conductive film to allow a pillar-shaped semiconductor layer to be buried therein; flattening the first dielectric or gate conductive film while detecting an end-point using a stopper formed on top of the pillar-shaped semiconductor layer; forming a second dielectric or gate conductive film; etching the second dielectric or gate conductive film and calculating an etching rate during the etching; and detecting an end-point of etching of the first dielectric or gate conductive film, based on the etching rate of the second dielectric or gate conductive film during etching-back of the second dielectric or gate conductive film, to control an etching amount of the first dielectric or gate conductive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.