Resistive memory device with an air gap

US8212231B2 · kind B2 · utility

Assignee

• Industrial Technology Research Institute · TW

Inventor

• Wei-Su Chen · Hsinchu, TW

Key dates

• Filing date: Dec 30, 2009
• Grant date: Jul 3, 2012
• Expiry date: Feb 11, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/00

Abstract

A resistive memory device and a fabricating method thereof are introduced herein. In resistive memory device, a plurality of bottom electrodes is disposed in active region of a substrate. Each of the bottom electrodes is disposed to correspond to each of the conductive channels; a patterned resistance switching material layer and the patterned top electrode layer are sequentially stacked on the bottom electrodes. An air dielectric layer exists between the patterned resistance switching material layer and the bottom electrodes. A plurality of patterned interconnections is disposed on the patterned top electrode.