High temperature performance capable gallium nitride transistor
US8212290B2 · kind B2 · utility
8Cited by
15References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2007 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Aug 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A transistor device capable of high performance at high temperatures. The transistor comprises a gate having a contact layer that contacts the active region. The gate contact layer is made of a material that has a high Schottky barrier when used in conjunction with a particular semiconductor system (e.g., Group-III nitrides) and exhibits decreased degradation when operating at high temperatures. The device may also incorporate a field plate to further increase the operating lifetime of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.