Semiconductor storage device and methods of producing it

US8212298B2 · kind B2 · utility

Assignee

• UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. · SG

Inventors

• Fujio Masuoka · Yokohama, JP
• Shintaro Arai · Tokyo, JP

Key dates

• Filing date: Feb 11, 2010
• Grant date: Jul 3, 2012
• Expiry date: Nov 6, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A semiconductor storage device where one MOS transistor in a memory cell section includes a selection transistor, and one MOS transistor in a peripheral circuit section includes a first MOS transistor and a second MOS transistor of different conductivity type, the first MOS and second MOS transistors and the selection transistor include lower drain or source regions in a planar semiconductor layer, a pillar-shaped semiconductor layer on the planar semiconductor layer, upper source or drain regions in an upper portion of the pillar-shaped semiconductor layer, and a gate electrode that surrounds a sidewall of the pillar-shaped semiconductor layer through a dielectric film, and where a first silicide layer connects a surface of the lower drain or source region of the first MOS and second MOS transistors, and a second silicide layer on a surface of the lower drain or source region of the selection transistor.