Patent · US Active

High-voltage transistor with improved high stride performance

US8212318B2 · kind B2 · utility

3Cited by

3References

11Claims

0Family size

Assignee

austriamicrosystems AG

Inventors

Martin Knaipp · Kufstein, AT
Georg Röhrer · Graz, AT
Jong Mun Park · Graz, AT

Key dates

Filing date	Apr 16, 2007
Grant date	Jul 3, 2012
Priority date	—
Expiry date	Feb 7, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/516
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A high voltage NMOS transistor is disclosed where the p-doped body is isolated against the p-doped substrate by a DN well having a pinch-off region where the depth of the DN-well is at minimum. By the forming space charge region at raising drain potentials a shielding of the drain potential results because the space charge region touches the field oxide between source and drain at the pinch-off region. An operation at the high side at enhanced voltage levels is possible.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.