Magnetic sensor having a physically hard insulation layer over a magnetic bias structure
US8213132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2007 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Feb 17, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49048
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A narrow track-width magnetoresistive sensor by defining a trench formed between first and second hard bias layers and depositing the sensor into the trench. The sensor can include a sensor stack sandwiched between first and second electrically conductive lead layers. First and second electrically insulating side walls are formed at either side of the sensor stack. First and second hard bias layers extend from the sides of the sensor stack, being separated from the sensor stack by the first and second electrically insulating side walls. First and second physically hard insulation layers are provided over each of the hard bias layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.