Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth
US8216362B2 · kind B2 · utility
4Cited by
46References
20Claims
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Key dates
| Filing date | May 18, 2007 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Aug 11, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/206
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Processes for preparing a single crystal silicon ingot are disclosed. In certain embodiments, the processes involve controlling (1) a growth velocity, v, of the ingot as well as (2) an average axial temperature gradient, G, a corrected average axial temperature gradient, Gcorrected, or an effective average axial temperature gradient, Geffective, during the growth of at least a segment of the constant diameter portion of the ingot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.