Method for reducing defect concentration in crystals
US8216370B2 · kind B2 · utility
0Cited by
5References
17Claims
0Family size
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Key dates
| Filing date | Dec 12, 2005 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Dec 14, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.