Method and apparatus for variable conductance
US8216376B1 · kind B1 · utility
1Cited by
16References
11Claims
0Family size
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Key dates
| Filing date | Jan 15, 2009 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Mar 6, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45591
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of combinatorially processing a substrate and combinatorial processing chamber are provided. The processing chamber includes opposing annular rings defining a conductance gap that extends radially outward. The opposing annular rings are configured to vary the conductance gap in-situ. The variation of the conductance gap is another parameter for processing regions of a substrate differently to evaluate the impact of the conductance variation on a deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.