Patent assignee · US · COMPANY

INTERMOLECULAR, INC.

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727Patents
727Active
727Granted
64Portfolio score

Filing activity: May 18, 2005 → Jan 7, 2020 · 103 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US8440259B2 Vapor based combinatorial processing Chemistry; Metallurgy 518 Active
US8821985B2 Method and apparatus for high-K gate performance improvement and combinatorial processing Performing Operations; Transporting 324 Active
US9142764B1 Methods of forming embedded resistors for resistive random access memory cells Electricity 324 Active
US8900364B2 High productivity vapor processing system Chemistry; Metallurgy 183 Active
US8183553B2 Resistive switching memory element including doped silicon electrode Electricity 127 Active
US8144498B2 Resistive-switching nonvolatile memory elements Physics 101 Active
US7629198B2 Methods for forming nonvolatile memory elements with resistive-switching metal oxides Electricity 98 Active
US8945414B1 Oxide removal by remote plasma treatment with fluorine and oxygen radicals Electricity 90 Active
US7972897B2 Methods for forming resistive switching memory elements Electricity 69 Active
US7309658B2 Molecular self-assembly in substrate processing Emerging Cross-Sectional Technologies 55 Active
US8846484B2 ReRAM stacks preparation by using single ALD or PVD chamber Electricity 40 Active
US8294219B2 Nonvolatile memory element including resistive switching metal oxide layers Electricity 31 Active
US9012322B2 Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition Electricity 30 Active
US8277888B2 Dual path gas distribution device Emerging Cross-Sectional Technologies 27 Active
US9052456B2 Low-E glazing performance by seed structure optimization Emerging Cross-Sectional Technologies 25 Active
US8569104B2 Transition metal oxide bilayers Electricity 25 Active
US7544574B2 Methods for discretized processing of regions of a substrate Electricity 24 Active
US7678607B2 Methods for forming resistive switching memory elements Electricity 23 Active
US8466005B2 Method for forming metal oxides and silicides in a memory device Electricity 23 Active
US8072795B1 Biploar resistive-switching memory with a single diode per memory cell Physics 23 Active
US8686389B1 Diffusion barrier layer for resistive random access memory cells Electricity 22 Active
US8343813B2 Resistive-switching memory elements having improved switching characteristics Electricity 21 Active
US9246013B2 IGZO devices with composite channel layers and methods for forming the same Electricity 21 Active
US9315414B2 Low-e panels with ternary metal oxide dielectric layer and method for forming the same Chemistry; Metallurgy 20 Active
US9076523B2 Methods of manufacturing embedded bipolar switching resistive memory Physics 20 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.