Method of manufacturing a semiconductor device and substrate carrier structure
US8216919B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 19, 2011 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Jan 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/6835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate carrier structure includes a tray and a secondary electron absorbing material. The tray holds a semiconductor substrate having a first surface on which semiconductor device elements are formed. The secondary electron absorbing material is interposed between the tray and this first surface of the semiconductor substrate. When the semiconductor substrate is irradiated with charged particles to form lattice defects, the secondary electron absorbing material prevents unwanted trapping of secondary electrons emitted from the tray, and thereby reduces the variability of electrical characteristics of semiconductor device elements formed on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.