Polychromatic light emitting diode device having wavelength conversion layer made of semiconductor and method for manufacturing the same
US8217400B2 · kind B2 · utility
1Cited by
9References
9Claims
0Family size
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Key dates
| Filing date | Oct 12, 2009 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Feb 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A wavelength conversion layer is formed on a surface of a light emitting device for transforming a portion of light emitted from the light emitting device into light of a different wavelength. The transformed light is mixed with the untransformed light, and thus the light emitting device can emit light having preferred CIE coordinates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.