Semi-polar semiconductor light emission devices

US8217418B1 · kind B1 · utility

Assignee

• SiPhoton Inc. · US

Inventors

• Shaoher X. Pan · Palo Alto, US
• Jay Chen · Houston, US
• Justin Payne · San Jose, US
• Michael Heuken · Aachen, DE

Key dates

• Filing date: Feb 14, 2011
• Grant date: Jul 10, 2012
• Expiry date: Feb 14, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/819

Abstract

A light emitting device includes a silicon substrate comprising a (111) surface and a GaN crystal structure over the (111) surface of the silicon substrate. The GaN crystal structure includes a first surface along a semi-polar plane of the GaN crystal structure and a second surface along a polar plane of the GaN crystal structure. The light emitting device also includes light emission layers over the first surface of the GaN crystal structure. The light emission layers include at least one quantum well comprising GaN.